Tóm tắt: Diffusion of Ga and As ions in simulated liquid GaAs have been studied in a model containing 3000 ions via Molecular Dynamics simulation (MD). Diffusion constant D in system has been calculated over temperatures ranged from 5000K down to 1500K. Calculations show that the temperature dependence of the diffusion constant D show an Arrhenius law at relatively low temperatures above the melting point and show a power law, D~(T – Tc)γ, at higher temperatures.